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ADVANCE INFORMATION
MX26C4000B
FEATURES
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM * * * * *
Chip erase time: 2s (typ.) Chip program time: 25s (typ.) 100 minimum erase/program cycles Typical fast programming cycle duration 100us/byte Package type: - 32 pin plastic DIP - 32 pin PLCC - 32 pin TSOP - 32 pin SOP
* 512Kx 8 organization * Single +5V power supply * +12V programming voltage * Fast access time:70/90/100/120/150 ns * Totally static operation * Completely TTL compatible * Operating current:30mA * Standby current: 100uA
GENERAL DESCRIPTION
The MX26C4000B is a 5V only, 4M-bit, MTP EPROMTM (Multiple Time Programmable Read Only Memory). It is organized as 512K words by 8 bits per word, operates from a single + 5 volt supply, has a static standby mode, and features fast single address location programming. All programming signals are TTL levels, requiring a single pulse. It is design to be programmed and erased
by an EPROM programmer or on-board. The MX26C4000B supports a intelligent fast programming algorithm which can result in programming time of less than one minute. This MTP EPROMTM is packaged in industry standard 32 pin dual-in-line packages, 32 lead PLCC, 32 lead SOP and 32 lead TSOP packages.
PIN CONFIGURATIONS
VCC VPP
32 PDIP/SOP
VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A18 A17 A14 A13 A8 A9 A11 OE A10 CE Q7 Q6 Q5 Q4 Q3
32 PLCC
A12 A15 A16 A18
4 1 32 30 29
A17
A7 A6 A5 A4 A3 A2 A1 A0 Q0
5
A14 A13 A8 A9
MX26C4000B
9
MX26C4000B
25
A11 OE A10 CE
13 14
17
21 20
Q7
Q1
Q2
Q3
Q4
Q5
32 TSOP
A11 A9 A8 A13 A14 A17 A18 VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE Q7 Q6 Q5 Q4 Q3 GND Q2 Q1 Q0 A0 A1 A2 A3
PIN DESCRIPTION
SYMBOL A0~A18 Q0~Q7 CE OE VPP NC VCC GND PIN NAME Address Input Data Input/Output Chip Enable Input Output Enable Input Program Supply Voltage No Internal Connection Power Supply Pin (+5V) Ground Pin
MX26C4000B
P/N: PM0768
GND
1
Q6
REV. 0.6, JAN. 14, 2002
MX26C4000B
BLOCK DIAGRAM
WRITE CONTROL CE OE INPUT LOGIC HIGH VOLTAGE PROGRAM/ERASE STATE MACHINE (WSM)
X-DECODER
MX26C4000B FLASH ARRAY ARRAY
STATE REGISTER
ADDRESS LATCH A0-A18 AND BUFFER
SENSE AMPLIFIER
Y-DECODER
Y-PASS GATE
SOURCE HV COMMAND DATA DECODER
PGM DATA HV COMMAND DATA LATCH
PROGRAM DATA LATCH
Q0-Q7
I/O BUFFER
P/N: PM0768
2
REV. 0.6, JAN. 14, 2002
MX26C4000B
FUNCTIONAL DESCRIPTION
to the Read Mode. Robust design features prevent inadvertent write cycles resulting from VCC power-up and power-down transitions or system noise. To avoid initiation of write cycle during VCC power-up, a write cycle is locked out for VCC less than 4V. The two- command program and erase write sequence to the command register provide additional software protection against spurious data changes.
When the MX26C4000B is delivered, or it is erased, the chip has all 4M bits in the "ONE", or HIGH state. "ZEROs" are loaded into the MX26C4000B through the procedure of programming.
ERASE ALGORITHM
The MX26C4000B do not required preprogramming before an erase operation. The erase algorithm is a close loop flow to simultaneously erase all bits in the entire array. Erase operation starts with the initial erase operation. Erase verification begins at address 0000H by reading data FFH from each byte. If any byte fails to erase. the entire chip is reerased. to a maximum for 10 pulse counts of 500ms duration for each pulse. The maximum cumulative erase time is 3s. However. the device is usually erased in no more than 3 pulses. Erase verification time can be reduced by storing the address of the last byte that failed. Following the next erase operation verification may start at the stored address location. JEDEC standard erase algorithm can also be used. But erase time will increase by performing the unnecessary preprogramming.
PROGRAM VERIFY MODE
Verification should be performed on the programmed bits to determine that they were correctly programmed. Verification should be performed with OE and CE, at VIL, and VPP at its programming voltage.
ERASE VERIFY MODE
Verification should be performed on the erased chip to determine that the whole chip(all bits) was correctly erased. Verification should be performed with OE and CE at VIL, and VCC = 5V, VPP = 12.5V
AUTO IDENTIFY MODE PROGRAM ALGORITHM
The device is programmed byte by byte. A maximum of 25 pulses. each of 100us duration is allowed for each byte being programmed. The byte may be programmed sequentially or by random. After each program pulse, a program verify is done to determine if the byte has been successfully programmed. Programming then proceeds to the next desired byte location. JEDEC standard program algorithms can be used. The auto identify mode allows the reading out of a binary code from MTP EPROM that will identify its manufacturer and device type. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. This mode is functional in the 25 5 ambient temperature C C range that is required when programming the MX26C4000B. To activate this mode, the programming equipment must force 12.0 0.5 V on address line A9 of the device. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH. All other address lines must be held at VIL during auto identify mode. Byte 0 ( A0 = VIL) represents the manufacturer code, and byte 1 (A0 = VIH), the device identifier code. For the MX26C4000B, these two identifier bytes are given in the Mode Select Table. All identifiers for manufacturer and device codes will possess odd parity, with the MSB (DQ7) defined as the parity bit.
DATA WRITE PROTECTION
The design of the device protects against accidental erasure or programming. The internal state machine is automatically reset to the read mode on power-up. Using control register architecture, alteration of memory can only occur after completion of proper command sequences. The command register is only active when V is at high voltage. when V PP = V PPL , the device defaults PP
P/N: PM0768
3
REV. 0.6, JAN. 14, 2002
MX26C4000B
READ MODE
The MX26C4000B has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. Chip Enable (CE) is the power control and should be used for device selection. Output Enable (OE) is the output control and should be used to gate data to the output pins, independent of device selection. Assuming that addresses are stable, address access time (tACC) is equal to the delay from CE to output (tCE). Data is available at the outputs tOE after the falling edge of OE, assuming that CE has been LOW and addresses have been stable for at least tACC - tOE.
STANDBY MODE
The MX26C4000B has a CMOS standby mode which reduces the maximum VCC current to 100 uA. It is placed in CMOS standby when CE is at VCC 0.3 V. The MX26C4000B also has a TTL-standby mode which reduces the maximum VCC current to 1.5 mA. It is placed in TTL-standby when CE is at VIH. When in standby mode, the outputs are in a high-impedance state, independent of the OE input.
SYSTEM CONSIDERATIONS
During the switch between active and standby conditions, transient current peaks are produced on the rising and falling edges of Chip Enable. The magnitude of these transient current peaks is dependent on the output capacitance loading of the device. At a minimum, a 0.1 uF ceramic capacitor (high frequency, low inherent inductance) should be used on each device between VCC and GND to minimize transient effects. In addition, to overcome the voltage drop caused by the inductive effects of the printed circuit board traces on EPROM arrays, a 4.7 uF bulk electrolytic capacitor should be used between VCC and GND for each of the eight devices. The location of the capacitor should be close to where the power supply is connected to the array.
OUTPUT DISABLE
Output is disabled when OE is at logre high. When in output disabled all circuitry is enabled. Except the output pins are in a high impedance state(Hi-Z).
P/N: PM0768
4
REV. 0.6, JAN. 14, 2002
MX26C4000B
Table 1: BUS OPERATIONS
Mode Read Output Disable Standby Manufacturer Identification Device Identification Program Verify Program Inhibit VPP(1) VPPL VPPL VPPL VPPL VPPL VPPH VPPH VPPH A0 A0 X X VIL VIH A0 A0 X A9 A9 X X VID(2) VID(2) X X X CE VIL VIL VIH VIL VIL VIL VIH VIH OE VIL VIH X VIL VIL VIH VIL VIH Q0~Q7 Data Out Hi-Z Hi-Z Data=C2H Data=C0H Data In Data Out Hi-Z
Note: 1. Refer to DC Characteristics. When VPP=VPPL memory contents can be read but not written or erased. 2. VID is the intelligent identifier high voltage. Refer to DC Characteristics. 3. Read operations with VPP=VPPH may access array data or the intelligent identifier codes. 4. With VPP at high voltage the standby current equals ICC+IPP(standby). 5. Refer to Table 2 for vaild data-in during a write operation. 6. X can be VIL or VIH.
P/N: PM0768
5
REV. 0.6, JAN. 14, 2002
MX26C4000B
PROGRAMMING ALGORITHM FLOW CHART
VCC=6.25V VPP=12.75V
n=0
CE=100us Pulse
Verify
NO
N=N+1 NO
YES
next Address
n=25
Last Address YES YES Failed Check All Bytes 1st:VCC=6V 2nd:VCC=4.2V
NO
P/N: PM0768
6
REV. 0.6, JAN. 14, 2002
MX26C4000B
ERASE ALGORITHM FLOW CHART
START
n=0
Erase:
A9=12.5V VCC=5V VPP=12.5V
Chip Erase pulse
Verify:
A9=VIL or VIH VCC=5V VPP=12.5V
Yes
Erase Verify
No N=N+1
No n=10
Yes Faild
Passed
P/N: PM0768
7
REV. 0.6, JAN. 14, 2002
MX26C4000B
SWITCHING TEST CIRCUITS
DEVICE UNDER TEST
1.8K ohm +5V
CL 6.2K ohm
DIODES = IN3064 OR EQUIVALENT
CL = 100 pF including jig capacitance
SWITCHING TEST WAVEFORMS
2.0V
AC driving levels
2.0V TEST POINTS 0.8V OUTPUT
0.8V INPUT
AC TESTING: AC driving levels are 2.4V/0.4V for commercial grade. Input pulse rise and fall times are equal to or less than 10ns.
P/N: PM0768
8
REV. 0.6, JAN. 14, 2002
MX26C4000B
ABSOLUTE MAXIMUM RATINGS
RATING Storage Temperature Applied Input Voltage Applied Output Voltage VCC to Ground Potential A9 & VPP VALUE -65oC to 125oC -0.5V to 7.0V -0.5V to VCC + 0.5V -0.5V to 7.0V -0.5V to 13.5V Ambient Operating Temperature -40oC to 85oC
NOTICE: Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. NOTICE: Specifications contained within the following tables are subject to change.
DC/AC OPERATING CONDITION FOR READ OPERATION
MX26C4000B -90 Operating Temperature Industrial Vcc Power Supply -40 to 85C C 5V 10% -100 -40C to 85C 5V 10% -120 -40C to 85C 5V 10% -150 -40 to 85 C C 5V 10%
CAPACITANCE TA = 25oC, f = 1.0 MHz (Sampled only)
SYMBOL CIN COUT CVPP PARAMETER Input Capacitance Output Capacitance VPP Capacitance 18 TYP. MAX. 6 12 25 UNIT pF pF pF CONDITIONS VIN = 0V VOUT = 0V VPP = 0V
DC CHARACTERISTICS TA = -45C ~ 85C, VCC=5V10%
SYMBOL VIL VIH VOL VOH VOH ICC1 ISB ISB IPP ILI ILO VCC1 VPP1
P/N: PM0768
PARAMETER Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage (TTL) Output High Voltage (CMOS) VCC Active Current VCC Standby Current (CMOS) VCC Standby Current (TTL) VPP Supply Current (Program) Input Leakage Current Output Leakage Current Fast Programming Supply Voltage Fast Programming Voltage
MIN. -0.3 2.0 2.4 VCC-0.7V
MAX. 0.8 VCC + 1 0.4
UNIT CONDITIONS V V V V V IOL = 2.1mA, VCC=VCC MIN IOH = -0.4mA IOH = -0.1mA CE = VIL, OE=VIH, f=5MHz CE=VCC+0.2V, VCC=VCC MAX CE=VIH, VCC=VCC MAX CE=WE=VIL, OE=VIH VIN = 0 to 5.5V VOUT = 0 to 5.5V
30 100 1 10 -10 -10 6.0 12.5 10 10 6.5 13.0
mA uA mA uA uA uA V V
9
REV. 0.6, JAN. 14, 2002
MX26C4000B
AC RAED CHARACTERISTICS OVER OPERATING RANGE WITH VPP=VCC
Symbol Jeded STD tAVAV TRC tELQV TCE Read Cycle Time CE Access Time Parameter 70 90 100 120 150 Unit
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX 70 0 0 0 0 0 30 70 70 35 90 0 0 0 0 0 30 90 90 40 100 0 0 0 0 0 35 100 100 45 120 0 0 0 0 0 35 120 120 50 150 0 0 0 0 0 50 150 150 65 ns ns ns ns ns ns
tAVQV TACC Address Access Time tGLQV TOE tELQX TLZ tEHQZ TDF OE Access Time CE to Output in Low Z(Note 1) Chip Disable to Output in High Z (Note 2)
tGLQX TOLZ OE to Output in Low Z (Note 1) 0 tGHQZ TDF Output Disable to Output in High Z (Note 1) tAXQX TOH Output Hold from Address, CE or OE, change tVCS TVCS VCC Setup Time to Valid Read (Note 2) Note: 1. Sampled: not 100% tested. 2. Guaranteed by design. not tested. 50 0 0 30
0 0 30
0 0 35
0 0 35
0 0 50
ns ns
0
0
0
0
ns
50
50
50
50
us
P/N: PM0768
10
REV. 0.6, JAN. 14, 2002
MX26C4000B
AC WAVEFORMS FOR READ OPERATIONS
Power-Up Standby
Device and Address Selection
Outputs enabled
Data Valid
Standby Power-Up
Address
Addresses Stable tAVAV(tRC)
CE
tEHQZ(tDF)
OE
tGLQV(tOE) tELQV(tCE) tELQX(tLZ) tGLQX(tOLZ) Output Valid tAVQV(tACC) tAXQX(tOH) High Z tGHQZ(tDF)
Data
High Z
tVCS 5.0V
VCC
0V
P/N: PM0768
11
REV. 0.6, JAN. 14, 2002
MX26C4000B
AC WAVEFORMS FOR ERASE OPERATIONS
A9
Valid
tAVQ
Q0~Q7
VCC
5V
12V
VPP
tHE tE tEH
tGLQ
CE
tAVG
OE
Chip Erase All Matrix Verif
Table 2. Erasing Mode AC Characteristics
Symbol tA9HEL tAVGL tAVQV tEHA9L tER tGLQV
(1)
(1)
(TA=25 VCC=5V0.25V; VPP=12.5V0.25V) C;
Min 2 2 100 2 500 30 Max Unit us us ns us ms ns
Parameter A9 High to Chip Enable Low Address Valid to Output Enable Low Address Valid to Data Valid Chip Enable High to A9 Low First Erase Time Output Enable Low to Data Valid
VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
P/N: PM0768
12
REV. 0.6, JAN. 14, 2002
MX26C4000B
AC WAVEFORMS FOR PROGRAMMING OPERATIONS
A0-A18
tAVPL
VALID
Q0~Q7
tQVEL
DATA IN
tEHQX
DATA OUT
VCC
tVPHEL tGLQV tGHQZ
VPP
tVCHEL tGHAX
CE
tELEH tQXGL
OE
PROGRAM VERIFY
Table 3. Programming Mode AC Characteristics (1) (TA=25 VCC=6.25V0.25V; VPP=12.5V0.25V) C;
Symbol tAVPL TQVEL TVPHEL TVCHEL TELEH TEHQX TQXGL TGLQV TGHQZ TGHAX
(1) (2)
Alt tAS tDS tVPS tVCS tPW tDH tOES tOE tDFP tAH
Parameter Address Valid to Chip Enable Low Input Valid to Chip Enable Low VPP High to Chip Enable Low VCC High to Chip Enable Low Chip Enable Program Pulse Wodth Chip Enable High to Input Transition Input Transition to Output Enable Low Output Enable Low to Output Valid Output Enable High to Output Hi-Z Output Enable High to Address Transition
Min 2 2 2 2 95 2 2
Max
Unit us us us us
105
us us us
100 0 0 130
ns ns ns
VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. Sampled only, not 100% tested.
13
REV. 0.6, JAN. 14, 2002
P/N: PM0768
MX26C4000B
ORDERING INFORMATION
PLASTIC PACKAGE
PART NO. ACCESS TIME(ns) OPERATING Current MAX.(mA) MX26C4000BPC-90 MX26C4000BQC-90 MX26C4000BMC-90 MX26C4000BTC-90 MX26C4000BPC-10 MX26C4000BQC-10 MX26C4000BMC-10 MX26C4000BTC-10 MX26C4000BPC-12 MX26C4000BQC-12 MX26C4000BMC-12 MX26C4000BTC-12 MX26C4000BPC-15 MX26C4000BQC-15 MX26C4000BMC-15 MX26C4000BTC-15 MX26C4000BPI-90 MX26C4000BQI-90 MX26C4000BMI-90 MX26C4000BTI-90 MX26C4000BPI-10 MX26C4000BQI-10 MX26C4000BMI-10 MX26C4000BTI-10 MX26C4000BPI-12 MX26C4000BQI-12 MX26C4000BMI-12 MX26C4000BTI-12 MX26C4000BPI-15 MX26C4000BQI-15 MX26C4000BMI-15 MX26C4000BTI-15 90 90 90 90 100 100 100 100 120 120 120 120 150 150 150 150 90 90 90 90 100 100 100 100 120 120 120 120 150 150 150 150 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 STANDBY Current MAX.(uA) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 OPERATING TEMPERATURE 0 to 70 C C 0 to 70 C C 0 to 70 C C 0 to 70 C C 0 to 70 C C 0 to 70 C C 0 to 70 C C 0 to 70 C C 0 to 70 C C 0 to 70 C C 0 to 70 C C 0 to 70 C C 0 to 70 C C 0 to 70 C C 0 to 70 C C 0 to 70 C C -40C to 85 C -40C to 85 C -40C to 85 C -40C to 85 C -40C to 85 C -40C to 85 C -40C to 85 C -40C to 85 C -40C to 85 C -40C to 85 C -40C to 85 C -40C to 85 C -40C to 85 C -40C to 85 C -40C to 85 C -40C to 85 C 32 Pin DIP 32 Pin PLCC 32 Pin SOP 32 Pin TSOP 32 Pin DIP 32 Pin PLCC 32 Pin SOP 32 Pin TSOP 32 Pin DIP 32 Pin PLCC 32 Pin SOP 32 Pin TSOP 32 Pin DIP 32 Pin PLCC 32 Pin SOP 32 Pin TSOP 32 Pin DIP 32 Pin PLCC 32 Pin SOP 32 Pin TSOP 32 Pin DIP 32 Pin PLCC 32 Pin SOP 32 Pin TSOP 32 Pin DIP 32 Pin PLCC 32 Pin SOP 32 Pin TSOP 32 Pin DIP 32 Pin PLCC 32 Pin SOP 32 Pin TSOP PACKAGE
P/N: PM0768
14
REV. 0.6, JAN. 14, 2002
MX26C4000B
PACKAGE INFORMATION
32-PIN PLASTIC DIP(600 mil)
P/N: PM0768
15
REV. 0.6, JAN. 14, 2002
MX26C4000B
32-PIN PLASTIC LEADED CHIP CARRIER (PLCC)
P/N: PM0768
16
REV. 0.6, JAN. 14, 2002
MX26C4000B
32-PIN PLASTIC TSOP
P/N: PM0768
17
REV. 0.6, JAN. 14, 2002
MX26C4000B
32-PIN PLASTIC SOP (450 mil)
P/N: PM0768
18
REV. 0.6, JAN. 14, 2002
MX26C4000B
REVISION HISTORY
Revision No. Description 0.1 To add erase/program cycle Change title from MX26C4000A to MX26C4000B 0.2 To added 32SOP/TSOP types package and access time 150ns Modify device ID old 32H-->New C0H Modify read ID method Modify erase/program cycle from 100 to 50 Modify VCC Standby Current(TTL) from 1mA to 1.5mA 0.3 To added VCC1 & VPP1 to DC Characteristics Table Modify Package Information 0.4 To added chip erase time / chip program time Modify Package Information 0.5 Modify the Programming Operations Timing Waveforms 0.6 1.Cancel the command mode 2.Modify the cycle time from 50-->100 3.Modify the erase/program operation timing waveform and flowchart Page P1 All P1,10,11,16,18 P5 P4,5,6,12 P1 P10 P10 P17~20 P1 P17~20 P15 P12 P1 P6,7,12,13 Date DEC/18/2000 MAR/27/2001
APR/23/2001 JUL/04/2001 OCT/04/2001 JAN/14/2002
P/N: PM0768
19
REV. 0.6, JAN. 14, 2002
MX26C4000B
MACRONIX INTERNATIONAL CO., LTD.
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